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| TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T PRODUCT SUMMARY PART NUMBER TP0610L TP0610T VP0610L VP0610T BS250 V(BR)DSS MIN (V) -60 -60 -60 -60 -45 RDS(ON) MAX (W) 10 @ VGS = -10 V 10 @ VGS = -10 V 10 @ VGS = -10 V 10 @ VGS = -10 V 14 @ VGS = -10 V VGS(TH) (V) -1 to -2.4 -1 to -2.4 -1 to -3.5 -1 to -3.5 -1 to -3.5 ID (A) -0.18 -0.12 -0.18 -0.12 -0.18 VP0610L VP0610T BS250 FEATURES D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: -1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S 1 TO-92-18RM (TO-18 Lead Form) D 1 G 1 TO-236 (SOT-23) 3 G 2 G 2 S 2 D D 3 Top View TP0610L VP0610L S 3 Top View BS250 Top View TP0610T (T0)* VP0610T (V0)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain CurrentA Power Dissipation Dissi ation Maximum Junction-to-Ambient Operating Junction & Storage Temperature Range Notes A. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209. Applications information may also be obtained via FaxBack, request document #70611. Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors TA= 25_C TA= 100_C TA= 25_C TA= 100_C SYMBOL VDS VGS ID IDM PD RthJA TJ, Tstg TP0610L -60 "30 -0.18 -0.11 -0.8 0.8 0.32 156 TP0610T -60 "30 -0.12 -0.07 -0.4 0.36 0.14 350 VP0610L -60 "30 -0.18 -0.11 -0.8 0.8 0.32 156 -55 to 150 VP0610T -60 "30 -0.12 -0.07 -0.4 0.36 0.14 350 150 0.83 W _C/W _C BS250 -45 "25 -0.18 A UNIT V 1 TP0610L/T, VP0610L/T, BS250 Siliconix SPECIFICATIONSA LIMITS TP0610L/T PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = -10 mA VGS = 0 V, ID = -100 mA VDS = VGS, ID = -1 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS TJ = 125_C VDS = 0 V, VGS = "15 V VDS = -48 V, VGS = 0 V Z Zero G t Voltage Gate V lt Drain Current IDSS TJ = 125_C VDS = -25 V, VGS = 0 V VDS = -10 V, VGS = -4.5 V On-State Drain Currentc ID(on) VDS = -10 V VGS = -10 V VGS = -4.5 V, ID = -25 mA Drain-Source On-Resistancec rDS(on) VGS = -10 V ID = -0.5 A VGS = -10 V ID = -0.2 A VDS = -10 V, ID = -0.5 A Forward Transconductancec Diode Forward Voltage DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHINGD tON Turn-On Time td(on) tr tOFF Turn-Off Time td(off) tf Notes A. TA = 25_C unless otherwise noted. B. For DESIGN AID ONLY, not subject to production testing. C. Pulse test: PW v300 ms duty cycle v2%. D. Switching time is essentially independent of operating temperature. VDD = -25 V, RL = 133 W ID ^ -0 18 A, VGEN = -10 V -0.18 A RG = 25 W 8 6 10 8 7 8 15 20 15 20 VPDS06 10 15 10 15 ns 10 10 Ciss Coss Crss VDS = -25 V, VGS = 0 V f = 1 MHz 15 10 3 60 25 5 60 25 5 pF gfs VSD VDS = -10 V ID = -0.1 A IS = -0.5 A, VGS = 0 V L TJ = 125_C T L T L T 11 8 15 6.5 125 90 -1.1 80 60 25 10 20 10 80 mS 70 V 10 20 10 14 W -180 -750 -50 -600 -220 mA -1 -200 -1 -200 -0.5 mA -1.9 -1 -2.4 "10 "50 "20 -1 -3.5 "10 nA -70 -60 -60 -45 -1 -3.5 V SYMBOL TEST CONDITIONS TYPB MIN MAX VP0610L/T MIN MAX BS250 MIN MAX UNIT Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 2 TP0610L/T, VP0610L/T, BS250 Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics -500 VGS = -10 V -400 I D - Drain Current (mA) -8 V -7 V I D - Drain Current (mA) -8 -10 Output Characteristics for Low Gate Drive VGS = -3.0, -2.8 V -2.6 V -300 -6 V -6 -2.4 V -200 -5 V -4 -2.2 V -2 -100 -4 V -3 V -2.0 V -1.8 V 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics -100 VDS = -15 V TC = -55_C 125_C r DS(on)- On-Resistance ( W ) -80 I D - Drain Current (mA) 25_C 17.5 20.0 On Resistance vs. Gate to Source Voltage ID = -25 mA -0.2 A 15.0 -0.5 A 12.5 10.0 7.5 5.0 TJ = 25_C -60 -40 -20 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 2.5 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 25 r DS(on) Drain-Source On-Resistance ( W ) - On Resistance vs. Drain Current 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 -0.15 -0.30 -0.45 -0.60 -0.75 -50 Normalized On Resistance vs. Junction Temperature VGS = -10 V ID = -0.5 A 20 15 VGS = -10 V 10 5 0 ID - Drain Current (A) r DS(on) Drain-Source On-Resistance - (Normalized) -10 30 70 110 150 TJ - Junction Temperature (_C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 3 TP0610L/T, VP0610L/T, BS250 Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) (CONT'D) Threshold Region -1 50 VGS = 0 V f = 1 MHz I D - Drain Current (mA) TJ = 150_C -0.1 100_C C - Capacitance (pF) 40 Capacitance 30 50_C -0.01 0_C 20 Ciss 10 Coss -55_C -0.001 0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 -2.1 VGS - Gate-to-Source Voltage (V) 0 0 Crss -10 -20 -30 -40 -50 VDS - Drain-to-Source Voltage (V) Gate Charge -15.0 100 Load Condition Effects on Switching VDD = -25 V RG = 25 W VGS = 0 to -10 V V GS - Gate-to-Source Voltage (V) -12.5 ID = -0.5 A t - Switching Time (ns) tf -10.0 VDS = -30 V -7.5 -48 V td(off) 10 tr td(on) -5.0 -2.5 0 0 100 200 300 400 500 600 Qg - Total Gate Charge (pC) 1 -10 -100 ID - Drain Current (A) -1 k Normalized Effective Transient Thermal Impedance, Junction to Ambient (TO 226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 Notes: PDM 0.01 Single Pulse t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-52426--Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors 4 |
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